2N5077

Производитель-деталь №
2N5077
Производитель
General Semiconductor
Упаковка/футляр
-
Техническое описание
2N5077
Описание
TRANS 250V 3A TO59
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General Semiconductor
Категория товара :
Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
3 A
Current - Collector Cutoff (Max) :
250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
90 @ 500mA, 5V
Frequency - Transition :
40MHz
Mounting Type :
Stud Mount
Operating Temperature :
-
Package / Case :
TO-210AA, TO-59-3, Stud
Power - Max :
40 W
Product Status :
Active
Supplier Device Package :
TO-59
Transistor Type :
-
Vce Saturation (Max) @ Ib, Ic :
2V @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) :
250 V
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2N5077

Продукты, связанные с производителем

  • General Semiconductor
    TRANS NPN 40V 3A TO61
  • General Semiconductor
    TRANS NPN 115V 1A TO5
  • General Semiconductor
    TRANS 80V 10A TO61
  • General Semiconductor
    TRANS 80V 3A TO5
  • General Semiconductor
    TRANS 80V 5A TO111

Продукты, связанные с каталогом

Сопутствующие товары

Деталь Производитель Склад Описание
2N5000 Microchip Technology 35,000 NPN SILICON TRANSISTOR
2N5001 Microchip Technology 35,000 NPN SILICON TRANSISTOR
2N5002 Microchip Technology 35,000 NPN SILICON TRANSISTOR
2N5003 Microchip Technology 35,000 NPN SILICON TRANSISTOR
2N5004 Microchip Technology 35,000 NPN SILICON TRANSISTOR
2N5005 Microchip Technology 35,000 NPN SILICON TRANSISTOR
2N5006 Microchip Technology 35,000 POWER BJT
2N5007 Microchip Technology 35,000 POWER BJT
2N5008 Microchip Technology 35,000 POWER BJT
2N5010 Microsemi 35,000 NPN SILICON TRANSISTOR
2N5010S Microchip Technology 35,000 POWER BJT
2N5010U4 Microchip Technology 35,000 POWER BJT
2N5011 Microsemi 35,000 NPN SILICON TRANSISTOR
2N5011S Microchip Technology 35,000 POWER BJT
2N5011U4 Microchip Technology 35,000 POWER BJT