
2N5007
- Производитель-деталь №
- 2N5007
- Производитель
- Microchip Technology
- Упаковка/футляр
- -
- Техническое описание
- 2N5007
- Описание
- POWER BJT
- lang_0071
- 35000
Запросить предложение (ЗКП)
- * lang_0862:
- Компания:
- * Электронная почта:
- Телефон:
- Комментарий:
- lang_0872 :
- Microchip Technology
- Категория товара :
- Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 10 A
- Current - Collector Cutoff (Max) :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Frequency - Transition :
- -
- Mounting Type :
- Stud Mount
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Package / Case :
- TO-211MA, TO-210AC, TO-61-4, Stud
- Power - Max :
- 100 W
- Product Status :
- Active
- Supplier Device Package :
- TO-61
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- lang_0258
- 2N5007
Продукты, связанные с производителем
Продукты, связанные с каталогом
Сопутствующие товары
Деталь | Производитель | Склад | Описание |
---|---|---|---|
2N5000 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
2N5001 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
2N5002 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
2N5003 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
2N5004 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
2N5005 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
2N5006 | Microchip Technology | 35,000 | POWER BJT |
2N5008 | Microchip Technology | 35,000 | POWER BJT |
2N5010 | Microsemi | 35,000 | NPN SILICON TRANSISTOR |
2N5010S | Microchip Technology | 35,000 | POWER BJT |
2N5010U4 | Microchip Technology | 35,000 | POWER BJT |
2N5011 | Microsemi | 35,000 | NPN SILICON TRANSISTOR |
2N5011S | Microchip Technology | 35,000 | POWER BJT |
2N5011U4 | Microchip Technology | 35,000 | POWER BJT |
2N5012 | Microsemi | 35,000 | TRANS NPN 700V 0.2A TO5 |