- lang_0872 :
- Microsemi
- Категория товара :
- Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 200 mA
- Current - Collector Cutoff (Max) :
- 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 25mA, 10V
- Frequency - Transition :
- -
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Power - Max :
- 1 W
- Product Status :
- Obsolete
- Supplier Device Package :
- TO-5
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- -
- Voltage - Collector Emitter Breakdown (Max) :
- 700 V
- lang_0258
- 2N5012
Продукты, связанные с производителем
Продукты, связанные с каталогом
Сопутствующие товары
| Деталь | Производитель | Склад | Описание |
|---|---|---|---|
| 2N5000 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
| 2N5001 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
| 2N5002 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
| 2N5003 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
| 2N5004 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
| 2N5005 | Microchip Technology | 35,000 | NPN SILICON TRANSISTOR |
| 2N5006 | Microchip Technology | 35,000 | POWER BJT |
| 2N5007 | Microchip Technology | 35,000 | POWER BJT |
| 2N5008 | Microchip Technology | 35,000 | POWER BJT |
| 2N5010 | Microsemi | 35,000 | NPN SILICON TRANSISTOR |
| 2N5010S | Microchip Technology | 35,000 | POWER BJT |
| 2N5010U4 | Microchip Technology | 35,000 | POWER BJT |
| 2N5011 | Microsemi | 35,000 | NPN SILICON TRANSISTOR |
| 2N5011S | Microchip Technology | 35,000 | POWER BJT |
| 2N5011U4 | Microchip Technology | 35,000 | POWER BJT |
