MRF559GT

lang_0872 :

Microsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

150mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 50mA, 10V

Frequency - Transition :

870MHz

Gain :

9.5dB

Mounting Type :

-

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

-

Package / Case :

-

Power - Max :

2W

Product Status :

Obsolete

Supplier Device Package :

-

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

16V