MRF517

lang_0872 :

Microsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

150mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 60mA, 10V

Frequency - Transition :

4GHz

Gain :

9dB ~ 10dB

Mounting Type :

Through Hole

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

-

Package / Case :

TO-205AD, TO-39-3 Metal Can

Power - Max :

2.5W

Product Status :

Obsolete

Supplier Device Package :

TO-39

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

20V