MRF555T

lang_0872 :

Microsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA, 5V

Frequency - Transition :

-

Gain :

11dB ~ 12.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

-

Package / Case :

Power Macro

Power - Max :

3W

Product Status :

Obsolete

Supplier Device Package :

Power Macro

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

16V