
NGTD13T65F2WP
- Производитель-деталь №
- NGTD13T65F2WP
- Производитель
- onsemi
- Упаковка/футляр
- -
- Техническое описание
- NGTD13T65F2WP
- Описание
- IGBT TRENCH FIELD STOP 650V DIE
- lang_0071
- 35000
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- * lang_0862:
- Компания:
- * Электронная почта:
- Телефон:
- Комментарий:
- lang_0872 :
- onsemi
- Категория товара :
- Discrete Semiconductor Products > Transistors - IGBTs - Single
- Current - Collector (Ic) (Max) :
- -
- Current - Collector Pulsed (Icm) :
- 120 A
- Gate Charge :
- -
- IGBT Type :
- Trench Field Stop
- Input Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- Die
- Power - Max :
- -
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Supplier Device Package :
- Die
- Switching Energy :
- -
- Td (on/off) @ 25°C :
- -
- Test Condition :
- -
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 30A
- Voltage - Collector Emitter Breakdown (Max) :
- 650 V
- lang_0258
- NGTD13T65F2WP
Продукты, связанные с производителем
Продукты, связанные с каталогом
Сопутствующие товары
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---|---|---|---|
NGTD13R120F2SWK | onsemi | 35,000 | DIODE GEN PURP 1.2KV DIE |
NGTD13R120F2WP | onsemi | 35,000 | DIODE GEN PURP 1.2KV DIE |
NGTD13T120F2WP | onsemi | 35,000 | IGBT TRENCH FIELD STOP |
NGTD13T65F2SWK | onsemi | 35,000 | IGBT TRENCH FIELD STOP 650V DIE |
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NGTD14T65F2WP | onsemi | 35,000 | IGBT TRENCH FIELD STOP 650V DIE |
NGTD15R65F2SWK | onsemi | 35,000 | DIODE GEN PURP 650V DIE |
NGTD15R65F2WP | onsemi | 35,000 | DIODE GEN PURP 650V DIE |
NGTD17R120F2SWK | onsemi | 35,000 | DIODE GEN PURP 1.2KV DIE |
NGTD17R120F2WP | onsemi | 35,000 | DIODE GEN PURP 1.2KV DIE |
NGTD17T65F2SWK | onsemi | 35,000 | IGBT TRENCH FIELD STOP 650V DIE |
NGTD17T65F2WP | onsemi | 35,000 | IGBT TRENCH FIELD STOP 650V DIE |
NGTD20T120F2SWK | onsemi | 35,000 | IGBT TRENCH FIELD STOP 1200V DIE |
NGTD20T120F2WP | onsemi | 35,000 | IGBT TRENCH FIELD STOP 1200V DIE |
NGTD21T65F2SWK | onsemi | 35,000 | IGBT TRENCH FIELD STOP 650V DIE |