
NGTD15R65F2WP
- Производитель-деталь №
- NGTD15R65F2WP
- Производитель
- onsemi
- Упаковка/футляр
- -
- Техническое описание
- NGTD15R65F2WP
- Описание
- DIODE GEN PURP 650V DIE
- lang_0071
- 35000
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- * lang_0862:
- Компания:
- * Электронная почта:
- Телефон:
- Комментарий:
- lang_0872 :
- onsemi
- Категория товара :
- Discrete Semiconductor Products > Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- -
- Current - Reverse Leakage @ Vr :
- 1 µA @ 650 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- 175°C (Max)
- Package / Case :
- Die
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Speed :
- -
- Supplier Device Package :
- Die
- Voltage - DC Reverse (Vr) (Max) :
- 650 V
- Voltage - Forward (Vf) (Max) @ If :
- 2.9 V @ 25 A
- lang_0258
- NGTD15R65F2WP
Продукты, связанные с производителем
Продукты, связанные с каталогом
Сопутствующие товары
Деталь | Производитель | Склад | Описание |
---|---|---|---|
NGTD13R120F2SWK | onsemi | 35,000 | DIODE GEN PURP 1.2KV DIE |
NGTD13R120F2WP | onsemi | 35,000 | DIODE GEN PURP 1.2KV DIE |
NGTD13T120F2WP | onsemi | 35,000 | IGBT TRENCH FIELD STOP |
NGTD13T65F2SWK | onsemi | 35,000 | IGBT TRENCH FIELD STOP 650V DIE |
NGTD13T65F2WP | onsemi | 35,000 | IGBT TRENCH FIELD STOP 650V DIE |
NGTD14T65F2SWK | onsemi | 35,000 | IGBT TRENCH FIELD STOP 650V DIE |
NGTD14T65F2WP | onsemi | 35,000 | IGBT TRENCH FIELD STOP 650V DIE |
NGTD15R65F2SWK | onsemi | 35,000 | DIODE GEN PURP 650V DIE |
NGTD17R120F2SWK | onsemi | 35,000 | DIODE GEN PURP 1.2KV DIE |
NGTD17R120F2WP | onsemi | 35,000 | DIODE GEN PURP 1.2KV DIE |
NGTD17T65F2SWK | onsemi | 35,000 | IGBT TRENCH FIELD STOP 650V DIE |
NGTD17T65F2WP | onsemi | 35,000 | IGBT TRENCH FIELD STOP 650V DIE |
NGTD20T120F2SWK | onsemi | 35,000 | IGBT TRENCH FIELD STOP 1200V DIE |
NGTD20T120F2WP | onsemi | 35,000 | IGBT TRENCH FIELD STOP 1200V DIE |
NGTD21T65F2SWK | onsemi | 35,000 | IGBT TRENCH FIELD STOP 650V DIE |