PMH550UPEH

lang_0872 :

Nexperia

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

800mA (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.9 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

54.8 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

3-XFDFN

Power Dissipation (Max) :

360mW (Ta), 2.23W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

640mOhm @ 600mA, 4.5V

Supplier Device Package :

DFN0606-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

950mV @ 250µA