PMH550UNEH

lang_0872 :

Nexperia

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

770mA (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.4 nC @ 4 V

Input Capacitance (Ciss) (Max) @ Vds :

30.3 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

3-XFDFN

Power Dissipation (Max) :

380mW (Ta), 2.8W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

670mOhm @ 770mA, 4.5V

Supplier Device Package :

DFN0606-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

0.95V @ 250µA