RF1S25N06SM

Производитель-деталь №
RF1S25N06SM
Производитель
Harris Corporation
Упаковка/футляр
-
Техническое описание
RF1S25N06SM
Описание
N-CHANNEL POWER MOSFET
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3005

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Harris Corporation
Категория товара :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
25A
Drain to Source Voltage (Vdss) :
60 V
Drive Voltage (Max Rds On, Min Rds On) :
-
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
Mounting Type :
Surface Mount
Operating Temperature :
-
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) :
-
Product Status :
Active
Rds On (Max) @ Id, Vgs :
-
Supplier Device Package :
TO-263AB
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
-
Vgs(th) (Max) @ Id :
-
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RF1S25N06SM

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