PMDT290UCE,115

lang_0872 :

Nexperia

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

800mA, 550mA

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.68nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

83pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-563, SOT-666

Power - Max :

500mW

Product Status :

Not For New Designs

Rds On (Max) @ Id, Vgs :

380mOhm @ 500mA, 4.5V

Supplier Device Package :

SOT-666

Vgs(th) (Max) @ Id :

950mV @ 250µA