BDV65A

lang_0872 :

Central Semiconductor

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

12 A

Current - Collector Cutoff (Max) :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 5A, 4V

Frequency - Transition :

60MHz

Mounting Type :

Through Hole

Operating Temperature :

-

Package / Case :

TO-218-3

Power - Max :

125 W

Product Status :

Obsolete

Supplier Device Package :

TO-218

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

-

Voltage - Collector Emitter Breakdown (Max) :

80 V