BDV65A-S

lang_0872 :

Bourns, Inc.

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

12 A

Current - Collector Cutoff (Max) :

2mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 5A, 4V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

TO-218-3

Power - Max :

3.5 W

Product Status :

Obsolete

Supplier Device Package :

SOT-93

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

2V @ 20mA, 5A

Voltage - Collector Emitter Breakdown (Max) :

80 V