HS3M

Производитель-деталь №
HS3M
Производитель
YANGJIE
Упаковка/футляр
-
Техническое описание
HS3M
Описание
DIODE GEN PURP 1000V 3A DO214AB
lang_0071
35000

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YANGJIE
Категория товара :
Discrete Semiconductor Products > Diodes - Rectifiers - Single
Capacitance @ Vr, F :
30pF @ 4V, 1MHz
Current - Average Rectified (Io) :
3A
Current - Reverse Leakage @ Vr :
5 µA @ 1000 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
DO-214AB, SMC
Product Status :
Active
Reverse Recovery Time (trr) :
75 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
DO-214AB (SMC)
Voltage - DC Reverse (Vr) (Max) :
1000 V
Voltage - Forward (Vf) (Max) @ If :
1.7 V @ 3 A
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HS3M

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Сопутствующие товары

Деталь Производитель Склад Описание
HS3M SURGE 230 3A -1000V - SMC (DO-214AB) - REC
HS3M Taiwan Semiconductor 35,000 DIODE GEN PURP 3A DO214AB
HS3M YANGJIE 35,000 SMC 1000V 3.0A Diodes Rectifie
HS3M M6 Taiwan Semiconductor 35,000 DIODE GENERAL PURPOSE DO214AB
HS3M M6G Taiwan Semiconductor 35,000 DIODE GEN PURP 3A DO214AB
HS3M R6 Taiwan Semiconductor 35,000 DIODE GENERAL PURPOSE DO214AB
HS3M R6G Taiwan Semiconductor 35,000 DIODE GENERAL PURPOSE DO214AB
HS3M R7 Taiwan Semiconductor 35,000 DIODE GENERAL PURPOSE DO214AB
HS3M R7G Taiwan Semiconductor 575 DIODE GEN PURP 1KV 3A DO214AB
HS3M V7G Taiwan Semiconductor 35,000 DIODE GEN PURP 1KV 3A DO214AB
HS3MB YANGJIE 15,000 SMB 1000V 3.0A Diodes Rectifie
HS3MB Taiwan Semiconductor 35,000 DIODE GEN PURP 3A DO214AA
HS3MB R5G Taiwan Semiconductor 2,345 DIODE GEN PURP 1KV 3A DO214AA