HS3M
- Производитель-деталь №
- HS3M
- Производитель
- Taiwan Semiconductor
- Упаковка/футляр
- -
- Техническое описание
- HS3M
- Описание
- DIODE GEN PURP 3A DO214AB
- lang_0071
- 35000
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- * lang_0862:
- Компания:
- * Электронная почта:
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- Комментарий:
- lang_0872 :
- Taiwan Semiconductor
- Категория товара :
- Discrete Semiconductor Products > Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 50pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 3A
- Current - Reverse Leakage @ Vr :
- 10 µA @ 1000 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AB, SMC
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- 75 ns
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- DO-214AB (SMC)
- Voltage - DC Reverse (Vr) (Max) :
- -
- Voltage - Forward (Vf) (Max) @ If :
- -
- lang_0258
- HS3M
Продукты, связанные с производителем
Продукты, связанные с каталогом
Сопутствующие товары
| Деталь | Производитель | Склад | Описание |
|---|---|---|---|
| HS3M | SURGE | 230 | 3A -1000V - SMC (DO-214AB) - REC |
| HS3M | YANGJIE | 35,000 | DIODE GEN PURP 1000V 3A DO214AB |
| HS3M | YANGJIE | 35,000 | SMC 1000V 3.0A Diodes Rectifie |
| HS3M M6 | Taiwan Semiconductor | 35,000 | DIODE GENERAL PURPOSE DO214AB |
| HS3M M6G | Taiwan Semiconductor | 35,000 | DIODE GEN PURP 3A DO214AB |
| HS3M R6 | Taiwan Semiconductor | 35,000 | DIODE GENERAL PURPOSE DO214AB |
| HS3M R6G | Taiwan Semiconductor | 35,000 | DIODE GENERAL PURPOSE DO214AB |
| HS3M R7 | Taiwan Semiconductor | 35,000 | DIODE GENERAL PURPOSE DO214AB |
| HS3M R7G | Taiwan Semiconductor | 575 | DIODE GEN PURP 1KV 3A DO214AB |
| HS3M V7G | Taiwan Semiconductor | 35,000 | DIODE GEN PURP 1KV 3A DO214AB |
| HS3MB | YANGJIE | 15,000 | SMB 1000V 3.0A Diodes Rectifie |
| HS3MB | Taiwan Semiconductor | 35,000 | DIODE GEN PURP 3A DO214AA |
| HS3MB R5G | Taiwan Semiconductor | 2,345 | DIODE GEN PURP 1KV 3A DO214AA |
