Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max)：

DC Current Gain (hFE) (Min) @ Ic, Vce：

Package / Case：

Power - Max：

Resistor - Base (R1)：

Resistor - Emitter Base (R2)：

Supplier Device Package：

Transistor Type：

Vce Saturation (Max) @ Ib, Ic：

Voltage - Collector Emitter Breakdown (Max)：

Фильтр：

4 Записи

Деталь	Производитель	Описание		Stock	Действие
FA4L4L-T1B-A	Renesas Electronics Corporation	FA4L - BUILT-IN RE...	PDF RFQ	348,000 In-stock	Получить предложение
GA4F3M(0)-T1-A	Renesas Electronics Corporation	GA4F3M - BUILT-IN R...	PDF RFQ	63,000 In-stock	Получить предложение
GA1A4Z-T1-A	Renesas Electronics Corporation	GA1A4Z - SWITCHING...	PDF RFQ	11,455 In-stock	Получить предложение
HR1F3P(0)-T1-AZ	Renesas Electronics Corporation	HR1F3 - COMPOUND T...	PDF RFQ	25,000 In-stock	Получить предложение

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