J109,126

lang_0872 :

NXP Semiconductors

Категория товара :

Discrete Semiconductor Products > Transistors - JFETs

Current - Drain (Idss) @ Vds (Vgs=0) :

80 mA @ 15 V

Current Drain (Id) - Max :

-

Drain to Source Voltage (Vdss) :

25 V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

30pF @ 10V (VGS)

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max :

400 mW

Product Status :

Obsolete

Resistance - RDS(On) :

12 Ohms

Supplier Device Package :

TO-92-3

Voltage - Breakdown (V(BR)GSS) :

25 V

Voltage - Cutoff (VGS off) @ Id :

2 V @ 1 µA