BFR30,215

lang_0872 :

NXP Semiconductors

Категория товара :

Discrete Semiconductor Products > Transistors - JFETs

Current - Drain (Idss) @ Vds (Vgs=0) :

4 mA @ 10 V

Current Drain (Id) - Max :

10 mA

Drain to Source Voltage (Vdss) :

25 V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

250 mW

Product Status :

Obsolete

Resistance - RDS(On) :

-

Supplier Device Package :

SOT-23 (TO-236AB)

Voltage - Breakdown (V(BR)GSS) :

-

Voltage - Cutoff (VGS off) @ Id :

5 V @ 0.5 nA