IGC15T65QEX1SA1
- Производитель-деталь №
- IGC15T65QEX1SA1
- Производитель
- Infineon Technologies
- Упаковка/футляр
- -
- Техническое описание
- IGC15T65QEX1SA1
- Описание
- IGBT CHIP
- lang_0071
- 35000
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- * lang_0862:
- Компания:
- * Электронная почта:
- Телефон:
- Комментарий:
- lang_0872 :
- Infineon Technologies
- Категория товара :
- Discrete Semiconductor Products > Transistors - IGBTs - Single
- Current - Collector (Ic) (Max) :
- 30 A
- Current - Collector Pulsed (Icm) :
- 90 A
- Gate Charge :
- -
- IGBT Type :
- Trench Field Stop
- Input Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 175°C (TJ)
- Package / Case :
- Die
- Power - Max :
- -
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Supplier Device Package :
- Die
- Switching Energy :
- -
- Td (on/off) @ 25°C :
- -
- Test Condition :
- -
- Vce(on) (Max) @ Vge, Ic :
- 2.32V @ 15V, 30A
- Voltage - Collector Emitter Breakdown (Max) :
- 650 V
- lang_0258
- IGC15T65QEX1SA1
Продукты, связанные с производителем
Продукты, связанные с каталогом
Сопутствующие товары
| Деталь | Производитель | Склад | Описание |
|---|---|---|---|
| IGC10T65QEX1SA1 | Infineon Technologies | 35,000 | IGBT CHIP |
| IGC10T65U8QX1SA1 | Infineon Technologies | 35,000 | IGBT CHIP |
| IGC10T65U8QX7SA1 | Infineon Technologies | 35,000 | IGBT CHIP |
| IGC11T120T8LX1SA1 | Infineon Technologies | 35,000 | IGBT 1200V 8A SAWN ON FOIL |
| IGC11T60TEX7SA1 | Infineon Technologies | 35,000 | IGBT 600V 11A WAFER |
| IGC132T75E8RD2CKAX7SA1 | Infineon Technologies | 35,000 | IGBT 750V |
| IGC13T120T8LX1SA1 | Infineon Technologies | 35,000 | IGBT 1200V 10A SAWN ON FOIL |
| IGC18T120T8LX1SA2 | Infineon Technologies | 35,000 | IGBT 1200V 15A SAWN ON FOIL |
| IGC18T120T8QX1SA1 | Infineon Technologies | 35,000 | IGBT 1200V 15A DIE |
| IGC193T120T12RMAX7SA1 | Infineon Technologies | 35,000 | IGBT 1200V 200A |
