GT30J121(Q)
- Производитель-деталь №
- GT30J121(Q)
- Производитель
- Toshiba Electronic Devices and Storage Corporation
- Упаковка/футляр
- -
- Техническое описание
- GT30J121(Q)
- Описание
- IGBT 600V 30A 170W TO3PN
- lang_0071
- 35000
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- Компания:
- * Электронная почта:
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- Комментарий:
- lang_0872 :
- Toshiba Electronic Devices and Storage Corporation
- Категория товара :
- Discrete Semiconductor Products > Transistors - IGBTs - Single
- Current - Collector (Ic) (Max) :
- 30 A
- Current - Collector Pulsed (Icm) :
- 60 A
- Gate Charge :
- -
- IGBT Type :
- -
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- -
- Package / Case :
- TO-3P-3, SC-65-3
- Power - Max :
- 170 W
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Supplier Device Package :
- TO-3P(N)
- Switching Energy :
- 1mJ (on), 800µJ (off)
- Td (on/off) @ 25°C :
- 90ns/300ns
- Test Condition :
- 300V, 30A, 24Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.45V @ 15V, 30A
- Voltage - Collector Emitter Breakdown (Max) :
- 600 V
- lang_0258
- GT30J121(Q)
Продукты, связанные с производителем
Продукты, связанные с каталогом
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| GT30S-320-320-0.23-0 | T-Global Technology | 35,000 | THERM PAD 320MMX320MM PINK |
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