AFGY100T65SPD

lang_0872 :

onsemi

Категория товара :

Discrete Semiconductor Products > Transistors - IGBTs - Single

Current - Collector (Ic) (Max) :

120 A

Current - Collector Pulsed (Icm) :

300 A

Gate Charge :

109 nC

IGBT Type :

Trench Field Stop

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-247-3

Power - Max :

660 W

Product Status :

Active

Reverse Recovery Time (trr) :

105 ns

Supplier Device Package :

TO-247-3

Switching Energy :

5.1mJ (on), 2.7mJ (off)

Td (on/off) @ 25°C :

36ns/78ns

Test Condition :

400V, 100A, 5Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.05V @ 15V, 100A

Voltage - Collector Emitter Breakdown (Max) :

650 V