PHT11N06LT,135

lang_0872 :

NXP Semiconductors

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.9A (Ta)

Drain to Source Voltage (Vdss) :

55 V

Drive Voltage (Max Rds On, Min Rds On) :

5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

17 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

1400 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power Dissipation (Max) :

1.8W (Ta), 8.3W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

40mOhm @ 5A, 5V

Supplier Device Package :

SC-73

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±13V

Vgs(th) (Max) @ Id :

2V @ 1mA