BSN254,126

lang_0872 :

NXP Semiconductors

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

310mA (Ta)

Drain to Source Voltage (Vdss) :

250 V

Drive Voltage (Max Rds On, Min Rds On) :

2.4V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

120 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power Dissipation (Max) :

1W (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

5Ohm @ 300mA, 10V

Supplier Device Package :

TO-92-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 1mA