APT80SM120S

lang_0872 :

Microsemi

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Drain to Source Voltage (Vdss) :

1200 V

Drive Voltage (Max Rds On, Min Rds On) :

20V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

235 nC @ 20 V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power Dissipation (Max) :

625W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

55mOhm @ 40A, 20V

Supplier Device Package :

D3Pak

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+25V, -10V

Vgs(th) (Max) @ Id :

2.5V @ 1mA