IPD60R1K0CEATMA1

lang_0872 :

Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.3A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

13 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

280 pF @ 100 V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max) :

37W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

1Ohm @ 1.5A, 10V

Supplier Device Package :

PG-TO252-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 130µA