RSD201N10TL

lang_0872 :

ROHM Semiconductor

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

20A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

55 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2100 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max) :

850mW (Ta), 20W (Tc)

Product Status :

Not For New Designs

Rds On (Max) @ Id, Vgs :

46mOhm @ 20A, 10V

Supplier Device Package :

CPT3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA