JAN2N7236U

lang_0872 :

Microsemi

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

18A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

60 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-267AB

Power Dissipation (Max) :

4W (Ta), 125W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

220mOhm @ 18A, 10V

Supplier Device Package :

TO-267AB

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA