
APTC90DAM60CT1G
- Производитель-деталь №
- APTC90DAM60CT1G
- Производитель
- Microsemi
- Упаковка/футляр
- -
- Техническое описание
- APTC90DAM60CT1G
- Описание
- MOSFET N-CH 900V 59A SP1
- lang_0071
- 35000
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- Microsemi
- Категория товара :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 59A (Tc)
- Drain to Source Voltage (Vdss) :
- 900 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- Super Junction
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 540 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 13600 pF @ 100 V
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- SP1
- Power Dissipation (Max) :
- 462W (Tc)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 60mOhm @ 52A, 10V
- Supplier Device Package :
- SP1
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.5V @ 6mA
- lang_0258
- APTC90DAM60CT1G
Продукты, связанные с производителем
Продукты, связанные с каталогом
Сопутствующие товары
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APTC60DAM18CTG | Microchip Technology | 35,000 | MOSFET N-CH 600V 143A SP4 |