- lang_0872 :
- onsemi
- Категория товара :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 2.6A (Tc)
- Drain to Source Voltage (Vdss) :
- 500 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 460 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max) :
- 2.5W (Ta), 45W (Tc)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 2.7Ohm @ 1.3A, 10V
- Supplier Device Package :
- TO-252AA
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 250µA
- lang_0258
- FQD4N50TF
Продукты, связанные с производителем
Продукты, связанные с каталогом
Сопутствующие товары
| Деталь | Производитель | Склад | Описание |
|---|---|---|---|
| FQD4N20LTF | onsemi | 35,000 | MOSFET N-CH 200V 3.2A DPAK |
| FQD4N20LTM | onsemi | 35,000 | MOSFET N-CH 200V 3.2A DPAK |
| FQD4N20TF | onsemi | 35,000 | MOSFET N-CH 200V 3A DPAK |
| FQD4N20TM | onsemi | 35,000 | MOSFET N-CH 200V 3A DPAK |
| FQD4N20TM | onsemi | 35,000 | POWER FIELD-EFFECT TRANSISTOR, 3 |
| FQD4N25TF | onsemi | 35,000 | MOSFET N-CH 250V 3A DPAK |
| FQD4N25TM | Fairchild Semiconductor | 27,500 | MOSFET N-CH 250V 3A DPAK |
| FQD4N25TM | onsemi | 35,000 | MOSFET N-CH 250V 3A DPAK |
| FQD4N25TM-WS | onsemi | 8 | MOSFET N-CH 250V 3A DPAK |
| FQD4N50TF | Fairchild Semiconductor | 2,258 | MOSFET N-CH 500V 2.6A DPAK |
| FQD4N50TM | Fairchild Semiconductor | 3,035 | MOSFET N-CH 500V 2.6A DPAK |
| FQD4N50TM | onsemi | 35,000 | MOSFET N-CH 500V 2.6A DPAK |
| FQD4N50TM_WS | onsemi | 35,000 | MOSFET N-CH 500V 2.6A DPAK |
| FQD4P25TF | Fairchild Semiconductor | 35,000 | MOSFET P-CH 250V 3.1A DPAK |
| FQD4P25TF | onsemi | 35,000 | MOSFET P-CH 250V 3.1A DPAK |
