TPCF8B01(TE85L,F,M
- Производитель-деталь №
- TPCF8B01(TE85L,F,M
- Производитель
- Toshiba Electronic Devices and Storage Corporation
- Упаковка/футляр
- -
- Техническое описание
- TPCF8B01(TE85L,F,M
- Описание
- MOSFET P-CH 20V 2.7A VS-8
- lang_0071
- 35000
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- Toshiba Electronic Devices and Storage Corporation
- Категория товара :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 2.7A (Ta)
- Drain to Source Voltage (Vdss) :
- 20 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 1.8V, 4.5V
- FET Feature :
- Schottky Diode (Isolated)
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 6 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 470 pF @ 10 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- 8-SMD, Flat Lead
- Power Dissipation (Max) :
- 330mW (Ta)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 110mOhm @ 1.4A, 4.5V
- Supplier Device Package :
- VS-8 (2.9x1.5)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±8V
- Vgs(th) (Max) @ Id :
- 1.2V @ 200µA
- lang_0258
- TPCF8B01(TE85L,F,M
Продукты, связанные с производителем
Продукты, связанные с каталогом
Сопутствующие товары
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| TPCF8102(TE85L,F,M | Toshiba Electronic Devices and Storage Corporation | 35,000 | MOSFET P-CH 20V 6A VS-8 |
| TPCF8201(TE85L,F,M | Toshiba Electronic Devices and Storage Corporation | 35,000 | MOSFET 2N-CH 20V 3A VS-8 |
| TPCF8304(TE85L,F,M | Toshiba Electronic Devices and Storage Corporation | 35,000 | MOSFET 2P-CH 30V 3.2A VS-8 |
| TPCF8402(TE85L,F,M | Toshiba Electronic Devices and Storage Corporation | 35,000 | MOSFET N/P-CH 30V 4A/3.2A VS-8 |
| TPCF8A01(TE85L) | Toshiba Electronic Devices and Storage Corporation | 35,000 | MOSFET N-CH 20V 3A VS-8 |
