IRFL024NPBF

lang_0872 :

Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.8A (Ta)

Drain to Source Voltage (Vdss) :

55 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

18.3 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

400 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power Dissipation (Max) :

1W (Ta)

Product Status :

Discontinued at Digi-Key

Rds On (Max) @ Id, Vgs :

75mOhm @ 2.8A, 10V

Supplier Device Package :

SOT-223

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA