XN0NE9200L

lang_0872 :

Panasonic

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1.2A (Ta)

Drain to Source Voltage (Vdss) :

12 V

Drive Voltage (Max Rds On, Min Rds On) :

4V

FET Feature :

Schottky Diode (Isolated)

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

125°C (TJ)

Package / Case :

SC-74A, SOT-753

Power Dissipation (Max) :

600mW (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

450mOhm @ 800mA, 4V

Supplier Device Package :

Mini5-G1

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±15V

Vgs(th) (Max) @ Id :

1.3V @ 1mA