PML260SN,118

lang_0872 :

NXP Semiconductors

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

8.8A (Tc)

Drain to Source Voltage (Vdss) :

200 V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

13.3 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

657 pF @ 30 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-VDFN Exposed Pad

Power Dissipation (Max) :

50W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

294mOhm @ 2.6A, 10V

Supplier Device Package :

DFN3333-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA