APT6011B2VRG

lang_0872 :

Microchip Technology

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

49A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

450 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

8900 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-

Package / Case :

TO-247-3 Variant

Power Dissipation (Max) :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

110mOhm @ 24.5A, 10V

Supplier Device Package :

T-MAX™ [B2]

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

4V @ 2.5mA