TSM60N1R4CH C5G

lang_0872 :

Taiwan Semiconductor

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.3A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.7 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

370 pF @ 100 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation (Max) :

38W (Tc)

Product Status :

Not For New Designs

Rds On (Max) @ Id, Vgs :

1.4Ohm @ 2A, 10V

Supplier Device Package :

TO-251 (IPAK)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA