TK13P25D,RQ
- Производитель-деталь №
- TK13P25D,RQ
- Производитель
- Toshiba Electronic Devices and Storage Corporation
- Упаковка/футляр
- -
- Техническое описание
- TK13P25D,RQ
- Описание
- PB-F POWER MOSFET TRANSISTOR DPA
- lang_0071
- 35000
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- Toshiba Electronic Devices and Storage Corporation
- Категория товара :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 13A (Ta)
- Drain to Source Voltage (Vdss) :
- 250 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100 pF @ 100 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max) :
- 96W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 250mOhm @ 6.5A, 10V
- Supplier Device Package :
- DPAK
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.5V @ 1mA
- lang_0258
- TK13P25D,RQ
Продукты, связанные с производителем
Продукты, связанные с каталогом
Сопутствующие товары
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| TK13A45D(STA4,Q,M) | Toshiba Electronic Devices and Storage Corporation | 35,000 | MOSFET N-CH 450V 13A TO220SIS |
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| TK13A50DA(STA4,Q,M | Toshiba Electronic Devices and Storage Corporation | 35,000 | MOSFET N-CH 500V 12.5A TO220SIS |
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| TK13A65U(STA4,Q,M) | Toshiba Electronic Devices and Storage Corporation | 35,000 | MOSFET N-CH 650V 13A TO220SIS |
| TK13E25D,S1X(S | Toshiba Electronic Devices and Storage Corporation | 35,000 | MOSFET N-CH 250V 13A TO220-3 |
