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lang_0872 :

ROHM Semiconductor

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.4A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4.5V

FET Feature :

Schottky Diode (Isolated)

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

6.7 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

850 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Power Dissipation (Max) :

1.25W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

105mOhm @ 2.4A, 4.5V

Supplier Device Package :

8-TSST

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

1V @ 1mA