SCT2080KEC

lang_0872 :

ROHM Semiconductor

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

40A (Tc)

Drain to Source Voltage (Vdss) :

1200 V

Drive Voltage (Max Rds On, Min Rds On) :

18V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

106 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds :

2080 pF @ 800 V

Mounting Type :

Through Hole

Operating Temperature :

175°C (TJ)

Package / Case :

TO-247-3

Power Dissipation (Max) :

262W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

117mOhm @ 10A, 18V

Supplier Device Package :

TO-247

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+22V, -6V

Vgs(th) (Max) @ Id :

4V @ 4.4mA