ISC010N06NM5ATMA1

lang_0872 :

Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

39A (Ta), 330A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

143 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

11000 pF @ 30 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerTDFN

Power Dissipation (Max) :

3W (Ta), 214W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.05mOhm @ 50A, 10V

Supplier Device Package :

PG-TSON-8-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.3V @ 147µA