BTS115AE6327

lang_0872 :

Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

15.5A (Tc)

Drain to Source Voltage (Vdss) :

50 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

735 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-220-3

Power Dissipation (Max) :

50W

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

120mOhm @ 7.8A, 4.5V

Supplier Device Package :

PG-TO220-3-1

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

2.5V @ 1mA