XPH3R114MC,L1XHQ

Производитель-деталь №
XPH3R114MC,L1XHQ
Производитель
Toshiba Electronic Devices and Storage Corporation
Упаковка/футляр
-
Техническое описание
XPH3R114MC,L1XHQ
Описание
MOSFET P-CH 40V 100A 8SOP
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35000

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Toshiba Electronic Devices and Storage Corporation
Категория товара :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
100A (Ta)
Drain to Source Voltage (Vdss) :
40 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
9500 pF @ 10 V
Mounting Type :
Surface Mount
Operating Temperature :
175°C
Power Dissipation (Max) :
960mW (Ta), 170W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
3.1mOhm @ 50A, 10V
Supplier Device Package :
8-SOP Advance (5x5)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
+20V, -10V
Vgs(th) (Max) @ Id :
2.1V @ 1mA
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XPH3R114MC,L1XHQ

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