IPN80R4K5P7ATMA1

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Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1.5A (Tc)

Drain to Source Voltage (Vdss) :

800 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

4 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

80 pF @ 500 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power Dissipation (Max) :

6W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

4.5Ohm @ 400mA, 10V

Supplier Device Package :

PG-SOT223

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 20µA