TP5335K1-G

lang_0872 :

Microchip Technology

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

85mA (Tj)

Drain to Source Voltage (Vdss) :

350 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

110 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

360mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

30Ohm @ 200mA, 10V

Supplier Device Package :

TO-236AB (SOT23)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.4V @ 1mA