MSC015SMA070B

lang_0872 :

Microchip Technology

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

131A (Tc)

Drain to Source Voltage (Vdss) :

700 V

Drive Voltage (Max Rds On, Min Rds On) :

20V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

215 nC @ 20 V

Input Capacitance (Ciss) (Max) @ Vds :

4500 pF @ 700 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-247-3

Power Dissipation (Max) :

400W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

19mOhm @ 40A, 20V

Supplier Device Package :

TO-247-3

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+25V, -10V

Vgs(th) (Max) @ Id :

2.4V @ 1mA