BSZ900N20NS3GATMA1

lang_0872 :

Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

15.2A (Tc)

Drain to Source Voltage (Vdss) :

200 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

11.6 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

920 pF @ 100 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Power Dissipation (Max) :

62.5W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

90mOhm @ 7.6A, 10V

Supplier Device Package :

PG-TSDSON-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 30µA