IPB011N04LGATMA1

lang_0872 :

Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

180A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

346 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

29000 pF @ 20 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-7, D²Pak (6 Leads + Tab)

Power Dissipation (Max) :

250W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.1mOhm @ 100A, 10V

Supplier Device Package :

PG-TO263-7-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 200µA