
RFP23N06LE
- Производитель-деталь №
- RFP23N06LE
- Производитель
- Harris Corporation
- Упаковка/футляр
- -
- Техническое описание
- RFP23N06LE
- Описание
- N-CHANNEL, MOSFET
- lang_0071
- 1486
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- Harris Corporation
- Категория товара :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- -
- Drain to Source Voltage (Vdss) :
- -
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- FET Feature :
- -
- FET Type :
- -
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- -
- Operating Temperature :
- -
- Package / Case :
- -
- Power Dissipation (Max) :
- -
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- -
- Supplier Device Package :
- -
- Technology :
- -
- Vgs (Max) :
- -
- Vgs(th) (Max) @ Id :
- -
- lang_0258
- RFP23N06LE
Продукты, связанные с производителем
Продукты, связанные с каталогом
Сопутствующие товары
Деталь | Производитель | Склад | Описание |
---|---|---|---|
RFP22N10 | onsemi | 35,000 | MOSFET N-CH 100V 22A TO220-3 |
RFP25N05L | Harris Corporation | 35,000 | N-CHANNEL, MOSFET |
RFP25N06L | Harris Corporation | 1,389 | N-CHANNEL, MOSFET |
RFP28-DP | Brady Corporation | 35,000 | (RFP) RFP28DP, ROLL, 28.5"X150', |
RFP2N08 | Harris Corporation | 3,360 | N-CHANNEL, MOSFET |
RFP2N10 | Harris Corporation | 1,323 | N-CHANNEL, MOSFET |
RFP2N10L | onsemi | 35,000 | MOSFET N-CH 100V 2A TO220-3 |
RFP2N12 | Harris Corporation | 1,550 | N-CHANNEL, MOSFET |
RFP2N15 | Harris Corporation | 2,411 | N-CHANNEL, MOSFET |
RFP2N18 | Harris Corporation | 35,000 | N-CHANNEL, MOSFET |
RFP2N20 | Harris Corporation | 1,552 | N-CHANNEL, MOSFET |
RFP2NO8L | Harris Corporation | 1,609 | 2A, 80V, 1.05OHM, N CHANNEL MOSF |
RFP2P08 | Harris Corporation | 3,542 | P-CHANNEL POWER MOSFET |
RFP2P10 | Harris Corporation | 11,516 | P-CHANNEL POWER MOSFET |