BSM180C12P3C202

lang_0872 :

ROHM Semiconductor

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

180A (Tc)

Drain to Source Voltage (Vdss) :

1200 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

9000 pF @ 10 V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Module

Power Dissipation (Max) :

880W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

-

Supplier Device Package :

Module

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+22V, -4V

Vgs(th) (Max) @ Id :

5.6V @ 50mA