STL57N65M5

lang_0872 :

STMicroelectronics

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.3A (Ta), 22.5A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

110 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

4200 pF @ 100 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-PowerVDFN

Power Dissipation (Max) :

2.8W (Ta), 189W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

69mOhm @ 20A, 10V

Supplier Device Package :

PowerFlat™ (8x8) HV

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

5V @ 250µA